刊名:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
出版年:2017
出版时间:15 February 2017
年:2017
卷:393
期:Complete
页码:39-43
全文大小:1304 K
卷排序:393
文摘
Simulation of Total Ionizing Dose using the Finite Elements Method. Carrier generation, transport and trapping in the oxide. Application in three-dimensional bulk FinFET model of 22 nm node. Examination of trapped charge in the Shallow Trench Isolation. Trapped charge dependency of parasitic transistor current.