Comprehensive understanding of dark count mechanisms of single-photon avalanche diodes fabricated in deep sub-micron CMOS technologies

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• 作者：Yux Xu^a ; ^b ; ^{yuex@njupt.edu.cn} ; Ping Xiang^a ; Xiaopeng Xie^a
• 关键词：Single photon avalanche diode (SPAD) ; Dark count rate (DCR) ; Deep sub-micron (DSM) CMOS technologies ; Geiger mode TCAD simulation
• 刊名：Solid-State Electronics
• 出版年：2017
• 出版时间：March 2017
• 年：2017
• 卷：129
• 期：Complete
• 页码：168-174
• 全文大小：641 K
• 卷排序：129

文摘

The dark count noise mechanisms of DSM CMOS SPADs are investigated. A field dependence of DCR model including SRH, TAT and BTBT mechanisms is derived. Each DCR component is calculated using key model parameters from TCAD simulation. The TAT tunneling is the main DCR source for SPAD devices in DSM CMOS technologies. The BTBT tunneling will be the dominant origin of DCR for the scaled DSM CMOS SPADs.