BSIM4 parameter extraction for tri-gate Si nanowire transistors
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- 作者：Chika Tanaka ; chika.tanaka@toshiba.co.jp" class="auth_mail" title="E-mail the corresponding author ; Masumi Saitoh ; Kensuke Ota ; Takayuki Ishikawa ; Toshinori Numata
- 关键词：Parameter extraction ; Nanowire transistor ; Tri-gate ; BSIM4 ; SPICE model
- 刊名：Microelectronics Journal
- 出版年：2016
- 出版时间：January 2016
- 年：2016
- 卷：47
- 期：Complete
- 页码：1-6
- 全文大小：2038 K
文摘
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SPICE parameters of BSIM4 were successfully extracted for tri-gate NW Tr.
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Dependence of Rsd on Tr. geometry and process can be observed on the parameter.
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Single sets of parameters for Lg down to 35 nm were obtained.
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The parameters will be a useful tool for characterizing the circuit performance.