Fabrication of gated diamond field emitter array using a selective diamond growth process

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• 作者：Ha ; S.C. ; Kang ; D.H. ; Kim ; K.B. ; Min ; S.H. ; Kim ; I.H. ; Lee ; J.D.
• 关键词：Gated diamond field emitter array ; Selective diamond growth ; Bias enhanced nucleation
• 刊名：Thin Solid Films
• 出版年：1999
• 出版时间：March 12, 1999
• 年：1999
• 卷：341
• 期：1-2
• 页码：216-220
• 全文大小：670 K

文摘

A novel processing sequence for the formation of gated diamond field emitter array (triode system) is proposed and the feasibility is tested by investigating the field emission property. The processing scheme is based on the selective deposition of diamond by using the well established nucleation enhanced process on substrate, so callled bias enhanced nucleation (BEN). The structure of substrate was patterned [SiO₂/Mo(gate)SiO₂(insulator)Si(100). Our preliminary results show that the diamond field emitter is turned on at around 87 V/μm with the current level of about several μA.