Impact of gold deposition parameters on the drain-source leakage current in top-contact pentacene-based thin-film transistors

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• 作者：Wenjie Qin ; ^{qinw@hsu-hamburg.de} ; Holger Goebel
• 刊名：Microelectronic Engineering
• 出版年：2017
• 出版时间：25 February 2017
• 年：2017
• 卷：170
• 期：Complete
• 页码：29-33
• 全文大小：438 K
• 卷排序：170

文摘

Influence of gold deposition parameters on the leakage current was investigated. The leakage current can be suppressed by increasing the substrate temperature. The leakage current can be reduced by decreasing the gold contact thickness as well. An extended leakage current model is introduced. The contact thickness is the most important gold deposition parameter.