Metal-insulator transitions in (V1-xCrx)2O3 thin films deposited by reactive direct current magnetron co-sputtering
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- 作者：Madec Querré ; a ; b ; madec.querre@cnrs-imn.fr" class="auth_mail" title="E-mail the corresponding author ; Etienne Janoda ; Laurent Carioa ; Julien Tranchanta ; Benoit Corrazea ; Valé ; rie Bouquetb ; Sté ; phanie Deputierb ; Sté ; phane Cordierb ; Maryline Guilloux-Viryb ; Marie-Paule Beslanda ; marie-paule.besland@cnrs-imn.fr" class="auth_mail" title="E-mail the corresponding author
- 关键词：V2O3 ; Thin film ; Sputtering ; Mott insulator
- 刊名：Thin Solid Films
- 出版年：2016
- 出版时间：30 October 2016
- 年：2016
- 卷：617
- 期：part_PB
- 页码：56-62
- 全文大小：1200 K
文摘
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(V1‑xCrx)2O3 thin films (0 ≤ x ≤ 0 .60) deposited by reactive DC magnetron co-sputtering
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Investigation of V and Cr single target mode versus co-sputtering mode
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Effect of DC power of Cr target on composition and morphology of thin films
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Effect of Cr content x on cell parameters of (V1‑xCrx)2O3 thin films
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Effect of Cr content x on electrical properties of (V1‑xCrx)2O3 thin films