Band offsets at the (1 0 0)GaSb/Al₂O₃ interface from internal electron photoemission study

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• 作者：V.V. Afanas’ ; ev^a ; ^{valeri.afanasiev@fys.kuleuven.be"" rel=""nofollow} ; H.-Y. Chou^a ; A. Stesmans^a ; C. Merckling^b ; X. Sun^b ; ^c ; ^d
• 关键词：Interface barrier ; Band offset ; Internal photoemission
• 刊名：Microelectronic Engineering
• 出版年：2011
• 出版时间：July 2011
• 年：2011
• 卷：88
• 期：7
• 页码：1050-1053
• 全文大小：425 K

文摘

From electron internal photoemission and photoconductivity measurements at the (1 0 0)GaSb/Al₂O₃ interface, the top of the GaSb valence band is found to be 3.05 ± 0.10 eV below the bottom of the Al₂O₃ conduction band. This interface band alignment corresponds to conduction and valence band offsets of 2.3 ± 0.10 eV and 3.05 ± 0.15 eV, respectively, indicating that the valence band in GaSb lies energetically well above the valence band of In_xGa_1−xAs (0  x  0.53) or InP.