Electron barrier height at Cu_xTe_1 ? x/Al₂O₃ interfaces of conducting bridge memory stacks

详细信息    查看全文

• 作者：V.V. Afanas'ev^a ; ^{valeri.afanasiev@fys.kuleuven.be} ; F. De Stefano^a ; M. Houssa^a ; A. Stesmans^a ; L. Goux^b ; K. Opsomer^b ; C. Detavernier^c ; J.A. Kittl^b ; M. Jurczak^b
• 关键词：Internal photoemission ; Interface barrier ; Polarization layer ; Conducting bridge cells
• 刊名：Thin Solid Films
• 出版年：2013
• 出版时间：30 April, 2013
• 年：2013
• 卷：533
• 期：Complete
• 页码：34-37
• 全文大小：335 K

文摘

We addressed the possible variation of the electron barrier at the Cu_0.6Te_0.4/Al₂O₃ interface as compared to the pure Cu electrode case. The experiments were performed using structures fabricated by atomic layer deposition of an Al₂O₃ insulator on (100)Si or thermally oxidized (100)Si, followed by sputtering of Cu or Cu_0.6Te_0.4 top electrodes. These structures were used to observe electron photoemission from the metal layer into the oxide in order to determine the energy barrier for electrons between the Fermi level of the metal and the conduction band of the insulating layer. The electron barrier height at interfaces of Cu and Cu_0.6Te_0.4 electrodes is found to be the same but appears to be sensitive to the oxide type which is ascribed to the formation of a polarization layer.