Influence of metal electrode stoichiometry on the electron barrier height at CuxTe1鈭?/sub>x/Al2O3 interfaces for CBRAM applications
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- 作者：Francesca De Stefanoa ; francesca.destefano@fys.kuleuven.be" class="auth_mail ; Valeri V. Afanas&rsquo ; eva ; Michel Houssaa ; Ludovic Gouxb ; Karl Opsomerb ; Ma艂gorzata Jurczakb ; Andre Stesmansa
- 关键词：Internal photoemission ; Interface barrier ; Effective work function ; Conductive bridge RAM ; Electron barrier height
- 刊名：Microelectronic Engineering
- 出版年：25 May, 2014
- 年：2014
- 卷：120
- 期：Complete
- 页码：9-12
- 全文大小：632 K
文摘
Spectroscopy of Internal photoemission of electrons was applied to reveal the impact of the stoichiometry of CuxTe1鈭?/sub>x (0 猢?#xA0;x 猢?#xA0;1) electrodes on the barrier height between the electrode Fermi level and the bottom of the Al2O3 conduction band. The barriers observed in the structures with atomic layer deposited alumina films (20 or 10 nm) on (1 0 0) Si substrates are compared to the metal/SiO2 barriers in capacitors with thermally grown Si oxide. We found that the CuxTe1鈭?/sub>x stoichiometry has a marginal impact on the barrier height, yielding the same value for the Cu metal electrode even for high Te concentration (80%). In the case of pure Te electrode the photoemission spectral threshold is found to be shifted towards higher photon energy by 0.5 eV.