Effect of oxygen on tuning the TiNx metal gate work function on LaLuO₃

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• 作者：I.Z. Mitrovic ; H.M. Przewlocki ; K. Piskorski ; G. Simutis ; V.R. Dhanak ; N. Sedghi ; S. Hall
• 关键词：Titanium nitride ; Lanthanum lutetium oxide ; Band offsets ; Work function ; Oxygen ; Internal photoemission ; X-Ray photoelectron spectroscopy
• 刊名：Thin Solid Films
• 出版年：2012
• 出版时间：30 September, 2012
• 年：2012
• 卷：520
• 期：23
• 页码：6959-6962
• 全文大小：336 K

文摘

This paper presents experimental evidence on effective work function tuning due to the presence of oxygen at the TiNx/LaLuO₃ interface. Two complementary techniques, internal photoemission and X-ray photoelectron spectroscopy, show good agreement on the position of the metal gate Fermi level to conduction (2.79 ¡À 0.25 eV) and valence (2.65 ¡À 0.08 eV) band edge for TiNx/bulk LaLuO₃ gate stacks. The chemical shifts of Ti2p and N1s core levels and different degree in ionicity of TiNx metal gates correlate with the observed valence band offset shifts. The results have significance for setting the band edge work function and resulting low threshold voltage for ultimately scaled LaLuO₃-based p-metal oxide semiconductor field effect transistor devices.