GaAs metal-semiconductor-metal Schottky microwave optical switches

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• 作者：Abdel Djawad Zebentout^a ; ^b ; Abdel Kader Aissat^b ; ^c ; ^{sakre23@yahoo.fr} ; Zouaoui Bensaad^a ; Malek Zegaoui^b ; Antoine Pagies^b ; Didier Decoster^b
• 关键词：Metal&ndash ; Semiconductor&ndash ; Metal (MSM) photodetector ; Schottky contact ; Microwave photoswitch
• 刊名：Optics and Laser Technology
• 出版年：2013
• 出版时间：April, 2013
• 年：2013
• 卷：47
• 期：Complete
• 页码：1-3
• 全文大小：512 K

文摘

The aim of our work was to integrate Schottky MSM photodetectors in the central strip of coplanar lines for microwave switching application. The MSM photodetectors in the microwave lines have an active surface of 3¡Á3 ¦Ìm² and electrode spacing of 0.2, 0.3, 0.5 and 1 ¦Ìm. The characterization of the structures in darkness and under illumination allowed us to obtain On/Off ratio of 26-28 dB at 20 GHz and 25 GHz. These results demonstrate that the structures show a good performance for microwave photoswitching which means good insulation in darkness and low insertion losses under illumination.