Simulation of the Metal-Semiconductor-Metal photodetector based on InGaAs for the photodetection at the wavelength 1.55 渭m

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• 作者：M. El Besseghi^a ; A. Aissat^a ; ^{sakre23@yahoo.fr" class="auth_mail} ; D. Decoster^b
• 关键词：Metal-Semiconductor-Metal (MSM) ; Photodetectors ; Semiconductor III&ndash ; V ; InGaAs ; Optoelectronics
• 刊名：Optik - International Journal for Light and Electron Optics
• 出版年：June 2014
• 年：2014
• 卷：125
• 期：11
• 页码：2543-2546
• 全文大小：742 K

文摘

In this paper we present the simulation of Metal-Semiconductor-Metal photodetector (MSM-PD) of interdigitated planar structure based on InAlAs/InGaAs adapted for photodetection at the wavelength 1.55 渭m. We use the theoretical models to plot the variations of the dark current, the photocurrent, the capacity, and the cut-off frequency of the photodetector as a function of bias voltage and the interelectrode distance. The obtained results show a very low dark current, mainly due to the introduction of a thin layer to increase the Schottky barrier based on In_0.52Al_0.48As in the epitaxial structure of component. The obtained photocurrent and cut-off frequencies are very appreciable, these latter are mainly limited by the transit time of the photo-generated carriers given the low component capacity obtained by simulation.