Attainment of dual-band edge work function by using a single metal gate and single high-k dielectric via ion implantation for HP CMOS device
详细信息 查看全文
- 作者：Qiuxia Xu ; xqx@ime.ac.cn" class="auth_mail" title="E-mail the corresponding author ; G. Xu ; H. Zhou ; H. Zhu ; J. Liu ; Y. Wang ; J. Li ; J. Xiang ; Q. Liang ; H. Wu ; J. Zhong ; M. Xu ; W. Xu ; X. Ma ; X. Wang ; X. Tong ; D. Chen ; J. Yan ; C. Zhao ; T. Ye
- 关键词：Dual band edge effective work function ; A single metal gate and single high-k dielectric ; Ion implantation into metal gate ; CMOSFETs
- 刊名：Solid State Electronics
- 出版年：2016
- 出版时间：January 2016
- 年：2016
- 卷：115
- 期：part_PA
- 页码：26-32
- 全文大小：2124 K
文摘
- •
Dual band-edge EWF are achieved by single metal/single high k via ion implantation.
- •
VFB modulations of −750 mV/570 mV for N/P MOS device are achieved respectively.
- •
Low Vt is obtained while shrinking EOT, no degradation of IG, μeff & reliability.
- •
LG 25 nm HKMG CMOSFETs & 32 frequency dividers were fabricated successfully.