Solution-grown near-stoichiometry Cu2ZnSnS4 films: Optical transitions and defect levels
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- 作者：A.E. Rakhshani ali.rakhshani@ku.edu.kw" class="auth_mail" title="E-mail the corresponding author
- 关键词：CZTS ; Thin film ; Chemical synthesis ; Electronic properties ; Photoconductivity ; Point defects
- 刊名：Journal of Alloys and Compounds
- 出版年：2016
- 出版时间：5 August 2016
- 年：2016
- 卷：675
- 期：Complete
- 页码：387-392
- 全文大小：983 K
文摘
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Device-quality CZTS film is grown by dip-coating from a methanol-based solution.
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Activation energies of three acceptor-type defect levels are measured.
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Six optical transitions predicted by theory are detected experimentally.
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The film is likely composed from both the stannite and kesterite phases of CZTS.