Quantum-limit anisotropic magnetoresistance of semiconducting n-BiSb alloys

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• 作者：N.A. Redko ; V.D. Kagan ; M.P. Volkov
• 关键词：Bi– ; Sb ; Magnetoresistivity ; Quantum oscillations ; Quantum limit ; Anisotropy
• 刊名：Physica B
• 出版年：2009
• 出版时间：15 December 2009
• 年：2009
• 卷：404
• 期：23-24
• 页码：5196-5199
• 全文大小：262 K

文摘

The magnetic-field dependences of resistivity and Hall coefficient of single crystals Bi<sub>0.93sub>Sb<sub>0.07sub> alloys were investigated at low temperatures. For HC<sub>3sub> and jC<sub>1sub> orientation the cyclotron frequencies of all three ellipsoids are equal and the electron concentration raises with the magnetic field in quantum limit. For HC<sub>2sub> and jC<sub>1sub> the quantum oscillations of resistivity were observed connected with the electrons of two ellipsoids, at higher fields the transition to the quantum limit takes place. The magnetic field increase in the quantum limit leads to the increase of electron energy from secondary ellipsoids and to their migration to the main ellipsoid. For HC<sub>1sub>j orientation the quantum oscillations of resistivity were connected with all three ellipsoids. The electron energy for main ellipsoid rises in quantum limit with magnetic field, leading to the migration of carriers from main ellipsoid to the secondary ellipsoids.