Dielectric relaxation behavior of Mn-modified Ca_0.9Pr_0.05[]_0.05Bi₂Nb₂O₉ -based high temperature piezoceramics

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• 作者：Zhihang Peng^a ; ^{chemiepengzh@gmail.com" class="auth_mail" title="E-mail the corresponding author} ; Xiangxiong Zeng^a ; Xiang Yang^a ; Feng Cao^a ; Jianguo Zhu^b
• 关键词：Defects ; Dielectric properties ; Electrical conductivity ; Piezoelectric properties
• 刊名：Ceramics International
• 出版年：2017
• 出版时间：January 2017
• 年：2017
• 卷：43
• 期：1
• 页码：1249-1255
• 全文大小：1832 K

文摘

Pr/Mn- codoped Aurivillius type Ca_0.95[]Bi₂Nb₂O₉ ([] denoted as A-site vacancies) piezoelectric ceramics were prepared by a conventional solid state sintering method. The microstructure and correlated electrical properties were investigated. A set of dielectric relaxation peaks was observed in the high doping level of Pr/Mn-doped CBN ceramics. The primary and secondary processes dominate the dc conduction and dielectric relaxation processes owing to various activation energies. The localized hopping of oxygen vacancies near the Mn doping centers causes the dielectric relaxation behavior. On the other hand, the long-range continuous transformation of oxygen vacancies is responsible for the dc conduction process, which has a higher energy barrier than that of the localized hopping. The thermal depolarization behavior of piezoelectric properties was also studied.