Synthesis of large-scale 2-D MoS₂ atomic layers by hydrogen-free and promoter-free chemical vapor deposition

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• 作者：Hung Nguyen^a ; Chih-Fang Huang^b ; Weijun Luo^c ; Guangrui (Maggie) Xia^c ; Zhiqiang Chen^d ; Zhiqiang Li^e ; Christopher Raymond^e ; David Doyle^e ; Feng Zhao^a ; ^{feng.zhao@wsu.edu" class="auth_mail" title="E-mail the corresponding author}
• 关键词：Molybdenum disulfide ; Chemical vapor deposition ; Wafer-size ; 2-D material ; Transition metal dichalcogenides
• 刊名：Materials Letters
• 出版年：2016
• 出版时间：1 April 2016
• 年：2016
• 卷：168
• 期：Complete
• 页码：1-4
• 全文大小：1461 K

文摘

As one of the two-dimensional (2-D) transition metal dichalcogenides, atomically thin molybdenum disulfide (MoS₂) has attracted significant attention and research interests for micro and nanoelectronic applications. Significant efforts have been made to develop different approaches in order to obtain atomic layer MoS₂, such as exfoliation, chemical synthesis, and physical or chemical vapor deposition (CVD) processes. In this paper, we report a hydrogen-free and promoter-free CVD growth to synthesize large-area MoS₂ atomic layers. A variety of techniques including optical microscopy (OM), atomic force microscopy (AFM), photoluminescence (PL) mapping, Raman and x-ray photoelectron spectroscopy (XPS), high resolution electron microscopy (HREM) and scanning transmission electron microscopy (STEM) were applied to characterize the film quality, uniformity and layer numbers. High quality centimeter-sized MoS₂ atomic layers were demonstrated, which form a foundation to develop wafer-sized material platform for device fabrication and production.