Molecular beam epitaxy of GaSb on GaAs substrates with AlSb/GaSb compound buffer layers
详细信息 查看全文
- 作者：Ruiting Hao ; Shukang Deng ; Lanxian Shen ; Peizhi Yang ; Jielei Tu ; Hua Liao ; Yingqiang Xu ; Zhichuan Niu
- 关键词：Gallium Arsenide ; Gallium antimonide ; Gallium antimonide/Aluminum antimonide Superlattices ; Molecular Beam Epitaxy
- 刊名：Thin Solid Films
- 出版年：2010
- 出版时间：29 October 2010
- 年：2010
- 卷：519
- 期：1
- 页码：228-230
- 全文大小：791 K
文摘
GaSb films with AlSb/GaSb compound buffer layers were grown by molecular beam epitaxy on GaAs (001) substrates. The crystal quality and optical properties were studied by high resolution transition electron microscopy and low temperature photoluminescence spectra (PL), respectively. It was found that the AlSb/GaSb compound buffer layers can restrict the dislocations into GaSb epilayers. The intensity of PL spectra of GaSb layer becomes large with the increasing the periods of AlSb/GaSb superlattices, indicating that the optical quality of GaSb films is improved.