A novel ultra steep dynamically reconfigurable electrostatically doped silicon nanowire Schottky Barrier FET
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- 作者：Sangeeta Singh ; sangeeta.singh@iiitdmj.ac.in" class="auth_mail" title="E-mail the corresponding author ; Ruchir Sinha ; P.N. Kondekar
- 关键词：Symmetric structure ; Schottky Barrier FET (SB-FET) ; Dopant-free ; Dynamic reconfigurability ; Random dopant fluctuations (RDF)
- 刊名：Superlattices and Microstructures
- 出版年：2016
- 出版时间：May 2016
- 年：2016
- 卷：93
- 期：Complete
- 页码：40-49
- 全文大小：3402 K
文摘
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Investigated an ultra steep, symmetric and dynamically configurable, E-SiNW-SB-FET.
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Steep SS is due to the cumulative effect of weak impact-ionization induced positive feedback and electrostatic modulation of Schottky barrier heights at both terminals.
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The polarity of the devices can be changed on-the-fly.
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A calibrated 3-D TCAD simulation re sults exhibit the SS of 2 mV/dec for n-E-SiNW-SB-FET and 9 mV/dec for p-E-SiNW-SB-FET for about five decades of current.