Study of the MOCVD growth of ZnO on GaAs substrates: Influence of the molar ratio of the precursors on structural and morphological properties

详细信息    查看全文

• 作者：S. Agouram ; J.A. Bastos-Segura ; V. Muñ ; oz-Sanjosé
• 关键词：ZnO ; MOCVD ; Precursor ratio ; XRD ; SEM
• 刊名：Superlattices and Microstructures
• 出版年：2007
• 出版时间：July-December 2007
• 年：2007
• 卷：42
• 期：1-6
• 页码：140-144
• 全文大小：574 K

文摘

ZnO thin films were grown by metal-organic chemical vapour deposition (MOCVD) on GaAs(100) and GaAs(111)A substrates. The growth experiments were performed at temperatures ranging from 290 to 500 C and atmospheric pressure. Diethylzinc (DEZn) and tertiary butanol (tBuOH) were used as Zn and O precursors, respectively. The crystallinity of the grown films was studied by X-Ray Diffraction (XRD) and the thickness and morphology were investigated by Scanning Electron Microscopy (SEM). The influence of substrate orientation and molar ratio of the precursors on the crystalline orientation and morphology of the ZnO grown films was analysed.