ZnO thin films were grown by metal-organic chemical
vapour deposition (MOCVD) on GaAs(100) and GaAs(111)A substrates. The growth experiments were performed at temperatures ranging from 290 to 500
![]()
C and atmospheric pressure. Diethylzinc (DEZn) and tertiary butanol (
tBuOH) were used as Zn and O precursors, respecti
vely. The crystallinity of the grown films was studied by X-Ray Diffraction (XRD) and the thickness and morphology were in
vestigated by Scanning Electron Microscopy (SEM). The influence of substrate orientation and molar ratio of the precursors on the crystalline orientation and morphology of the ZnO grown films was analysed.