The electronic structure of single-crystalline CdO is investigated using X-ray photoemission spectroscopy. The surface is prepared by in situ Ar+ ion bombardment and annealing (IBA). The core level spectra before and after the IBA are presented, and reveal a dramatic reduction in the surface contamination. The semi-core Cd 4d level and valence band region following the IBA are also shown. The surface Fermi level is pinned 1.3±0.10 eV above the valence band maximum.