Crystal growth of Hg1−xMnxSe for infrared detection
详细信息 查看全文
- 作者：C. Reig ; C.J. Gó ; mez-Garcí ; a ; V. Muñ ; oz-Sanjosé
- 关键词：Crystal growth ; Semimagnetic semiconductors ; HgMnSe ; Infrared
- 刊名：Microelectronics Journal
- 出版年：2007
- 出版时间：March 2007
- 年：2007
- 卷：38
- 期：3
- 页码：327-331
- 全文大小：178 K
文摘
In this work, we report on the successfully growing Hg1−xMnxSe bulk crystals using a mixed, travelling heater method and Bridgman method, two-step procedure. Firstly, and with the aim of reducing Hg high pressure related to the high temperature synthesis reaction between the components in elemental form, HgSe crystals were synthesized and grown by the cold travelling heater method. Secondly, previously sublimated Mn and Se were incorporated to complete the desired composition. Then, the Bridgman growth was carried out by heating the alloy at a temperature of about 880 °C and lowering it at rate of 1 mm/h through a gradient of 25 °C/cm. The Hg1−xMnxSe crystals were characterized by scanning electron microscopy, energy dispersive X-ray analysis, X-ray diffractometry, Fourier transform infrared spectroscopy and magnetic susceptibility measurements. The summary of the experimental results allows us to be optimistic with the potential of Hg1−xMnxSe as regards using Hg1−xMnxTe and Hg1−xCdxTe for infrared photodetection.