Raman scattering from GaAs/AlGaAs multiple quantum well structures grown by two-step molecular beam epitaxy

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• 作者：Taegeon Lee^a ; Heesuk Rho^a ; ^{rho@chonbuk.ac.kr} ; Jin Dong Song^b ; Won Jun Choi^b
• 关键词：GaAs/AlGaAs ; Multiple quantum well ; Strain ; Stress ; Raman spectroscopy
• 刊名：Current Applied Physics
• 出版年：2017
• 出版时间：March 2017
• 年：2017
• 卷：17
• 期：3
• 页码：398-402
• 全文大小：608 K
• 卷排序：17

文摘

Optical phonons of GaAs/AlGaAs multiple quantum well structures were investigated. Optical phonon responses were significantly enhanced under resonant excitation. The doubly degenerate GaAs TO phonons were split into two distinct phonons. Two-step growth temperatures significantly affected stress and strain depth-profiles.