Comparison of growth methods for Si/SiO2 nanostructures as nanodot hetero-emitters for photovoltaic applications
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- 作者：Maurizio Roczen ; Enno Malguth ; Martin Schade ; Andreas Sch?pke ; Abdelazize Laades ; Michael Blech ; Orman Gref ; Thomas Barthel ; Jan Amaru T?fflinger ; Manfred Schmidt ; Hartmut S. Leipner ; Lars Korte ; Bernd Rech
- 关键词：Silicon nanostructures ; hetero-emitter ; HRTEM
- 刊名：Journal of Non-Crystalline Solids
- 出版年：2012
- 出版时间：1 September, 2012
- 年：2012
- 卷：358
- 期：17
- 页码：2253-2256
- 全文大小：781 K
文摘
Two different growth mechanisms are compared for the fabrication of Si/SiO2 nanostructures on crystalline silicon (c-Si) to be used as hetero-emitter in high-efficiency solar cells: (1) The decomposition of substoichiometric amorphous SiOx (a-SiOx) films with 0 < x < 1.3 and (2) the dewetting of thin amorphous silicon (a-Si) layers.
The grown layers are investigated with regard to their structural properties, their passivation quality for c-Si wafer substrates and their electrical properties in order to evaluate their suitability as a nanodot hetero-emitter. While by layer decomposition, no passivating nanodots could be formed, the dewetting process allows fabricating nanodot passivation layers at temperatures as low as 600 ¡ãC. The series resistance through Ag/[Si-nanodots in SiO2]/c-Si/Al structures for dewetting is similar to nanostructured silicon rich SiOx films. Still, a nanodot hetero-emitter which exhibits both a satisfying passivation of the substrate and induces a high band bending by doping at the same time could not be fabricated yet.