Investigation of ultrathin Pt/ZrO₂-Al₂O₃-ZrO₂/TiN DRAM capacitors Schottky barrier height by internal photoemission spectroscopy

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• 作者：Sang Yeon Lee^a ; Jaewan Chang^b ; Jaehyung Choi^b ; Younsoo Kim^b ; HanJin Lim^b ; Hyeongtag Jeon^c ; ^{hjeon@hanyang.ac.kr} ; Hyungtak Seo^a ; ^d ; ^{hseo@ajou.ac.kr}
• 关键词：MIM capacitor ; Internal photoemission spectroscopy ; Schottky barrier height
• 刊名：Current Applied Physics
• 出版年：2017
• 出版时间：February 2017
• 年：2017
• 卷：17
• 期：2
• 页码：267-271
• 全文大小：1127 K
• 卷排序：17

文摘

Schottky barrier heights at interfaces in the Pt/ZAZ/TiN stack are evaluated using internal photoemission spectroscopy. Double carrier transport mechanism through oxide defects in Pt/ZAZ/TiN stack were identified from I-V analysis. Interfacial defects at the ZAZ/TiN interface are identified as TiON layer formed by interfacial chemical mixing.