Room temperature current-voltage (I-V) characteristics of Ag/InGaN/n-Si Schottky barrier diode

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• 作者：Erman Erdoğan^a ; ^{e.erdogan@alparslan.edu.tr} ; Mutlu Kundakç ; ı^b
• 关键词：Current-voltage characteristics ; Ag Schottky contact ; InGaN ; Room temperature ; Schottky barrier diode ; Thermionic vacuum arc (TVA)
• 刊名：Physica B: Condensed Matter
• 出版年：2017
• 出版时间：1 February 2017
• 年：2017
• 卷：506
• 期：Complete
• 页码：105-108
• 全文大小：301 K
• 卷排序：506

文摘

Metal-semiconductors (MSs) or Schottky barrier diodes (SBDs) have a significant potential in the integrated device technology. In the present paper, electrical characterization of Ag/InGaN/n-Si Schottky diode have been systematically carried out by simple Thermionic method (TE) and Norde function based on the I-V characteristics. Ag ohmic and schottky contacts are deposited on InGaN/n-Si film by thermal evaporation technique under a vacuum pressure of 1×10−5 mbar. Ideality factor, barrier height and series resistance values of this diode are determined from I-V curve. These parameters are calculated by TE and Norde methods and findings are given in a comparetive manner. The results show the consistency for both method and also good agreement with other results obtained in the literature. The value of ideality factor and barrier height have been determined to be 2.84 and 0.78 eV at room temperature using simple TE method. The value of barrier height obtained with Norde method is calculated as 0.79 eV.