Band gap dependence with temperature of semiconductors from solar cells electrical parameters

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• 作者：S. Bensalem^a ; ^{bensalemse@gmail.com} ; M. Chegaar^b ; ^c ; A. Herguth^d
• 关键词：Band gap ; Semiconductors ; Temperature ; Solar cells ; Open-circuit voltage ; Short-circuit current density
• 刊名：Current Applied Physics
• 出版年：2017
• 出版时间：January 2017
• 年：2017
• 卷：17
• 期：1
• 页码：55-59
• 全文大小：382 K
• 卷排序：17

文摘

A simple numerical approach to probe the gap evolution with temperature of semiconductors is proposed. The method is based on the measured open-circuit voltage and short-circuit current density of solar cells. The application of the scheme in the case of silicon gives satisfying results.