A theoretical scaling for rectifying and surface properties of highly-crystalline NC anthracene Schottky junctions
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- 作者：Songü ; l Fiat Varola ; songulvfiat@yahoo.com" class="auth_mail" title="E-mail the corresponding author ; Serkan Sayinb ; saynserkan@gmail.com" class="auth_mail" title="E-mail the corresponding author ; Serkan Eymura ; serkan_eymur@yahoo.com" class="auth_mail" title="E-mail the corresponding author ; Kü ; bra Uzunc
- 关键词：Electronic materials ; Thin films ; Sol-gel chemistry ; Semiconductors ; Electrical properties
- 刊名：Materials Research Bulletin
- 出版年：2017
- 出版时间：January 2017
- 年：2017
- 卷：85
- 期：Complete
- 页码：249-254
- 全文大小：841 K
文摘
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NAMA, which contains anthracene as core has been used in Schottky device.
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Sn/NAMA/n-Si is characterized by different methods under 1 h, 20 h, 36 h and 1 week.
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The electrical and surface properties have strongly dependent on aging period.
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NAMA exhibited a great increase in rectifying.