Crystallization mechanisms of (In₁₅Sb₈₅)_100−xBi_x phase change recording thin film

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• 作者：Sin-Liang Ou ; Po-Cheng Kuo ; Shu-Chi Sheu ; Ger-Pin Lin ; Tsung-Lin Tsai ; Sheng-Chi Chen ; Don-Yau Chiang ; Wei-Tai Tang
• 刊名：Materials and Design
• 出版年：2010
• 出版时间：April 2010
• 年：2010
• 卷：31
• 期：4
• 页码：1688-1690
• 全文大小：630 K

文摘

The (In₁₅Sb₈₅)_100−xBi_x films (x = 0–18.3) were deposited on nature oxidized Si wafer and glass substrate at room temperature by magnetron co-sputtering of Sb target and InBi composite target. The optical and thermal properties of the films were examined by reflectivity thermal analyzer. Microstructures of the films were analyzed by X-ray diffraction and transmission electron microscope. The crystallization activation energy of the (In₁₅Sb₈₅)_100−xBi_x film (x = 0–18.3) was decreased with increasing Bi content, this indicated that the crystallization speed was improved by doping Bi. The structure of as-deposited (In₁₅Sb₈₅)_100−xBi_x films was amorphous and it would transform to Sb, InSb, Bi, and BiIn₂ coexisting phases after annealing at 250 °C for 30 min.