Resistive switching behavior in single crystal SrTiO3 annealed by laser
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- 作者：Xinqiang Pana ; Yao Shuaia ; b ; yshuai@uestc.edu.cn" class="auth_mail" title="E-mail the corresponding author ; Chuangui Wua ; b ; cgwu@uestc.edu.cn" class="auth_mail" title="E-mail the corresponding author ; Wenbo Luoa ; b ; Xiangyu Suna ; Ye Yuanc ; Shengqiang Zhouc ; Xin Oud ; Wanli Zhanga ; b
- 关键词：Resistive switching ; Laser annealing ; SrTiO3
- 刊名：Applied Surface Science
- 出版年：2016
- 出版时间：15 December 2016
- 年：2016
- 卷：389
- 期：Complete
- 页码：1104-1107
- 全文大小：1237 K
文摘
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Laser annealing was used to introduce oxygen vacancies into the single crystal SrTiO3.
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The effect of laser annealing with different fluence on the single crystal SrTiO3 was systematically studied.
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The concentration of oxygen vacancies can be tuned by changing the fluence of laser.
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Resistive switching behavior was observed in the sample with relatively high laser fluence after an electro-forming process.