Influence of defect states and fixed charges located at the a-Si:H/c-Si interface on the performance of HIT solar cells

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• 作者：Louis Oppong-Antwi ; Shihua Huang ; ^{huangshihua@zjnu.cn} ; Qiannan Li ; Dan Chi ; Xiuqing Meng ; Lv He
• 关键词：Simulation ; Interface defect state ; Interface fixed charge ; a-Si ; H/c-Si hetero-junction solar cell
• 刊名：Solar Energy
• 出版年：2017
• 出版时间：1 January 2017
• 年：2017
• 卷：141
• 期：Complete
• 页码：222-227
• 全文大小：1840 K
• 卷排序：141

文摘

Efficiency of 29.19% in bifacial HIT solar cell was first achieved by simulation. Defect states and fixed charges at a-Si:H/p-Si interface were considered. Band bending dependent on interface defect states and fixed charges was confirmed.