Improving breakdown voltage and self-heating effect for SiC LDMOS with double L-shaped buried oxide layers

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• 作者：Meng-tian Bao^a ; Ying Wang^b ; ^{wangying7711@yahoo.com}
• 关键词：4H-SiC LDMOS ; Patterned buried oxide layer ; Breakdown voltage ; Self-heating effect
• 刊名：Superlattices and Microstructures
• 出版年：2017
• 出版时间：February 2017
• 年：2017
• 卷：102
• 期：Complete
• 页码：147-154
• 全文大小：1955 K
• 卷排序：102

文摘

SiC LDMOS with double L-shaped buried oxide layers (DL-SiC LDMOS) is investigated and simulated. DL-SiC LDMOS can improve breakdown voltage and prevent self-heating effect combining the technology of ENDIF and P-SOI. The breakdown voltage of proposed LDMOS is increased 32.6% and maximum lattice temperature is reduced 24 K.