Optical characterisation of III-V alloys grown on Si by spectroscopic ellipsometry

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• 作者：Brianna Conrad^a ; ; Anthony Lochtefeld^b ; Andrew Gerger^c ; Allen Barnett^a ; Ivan Perez-Wurfl^a
• 关键词：Optical constants ; Spectroscopic ellipsometry ; III-V on Si ; GaInP ; AlInP ; GaAsP
• 刊名：Solar Energy Materials and Solar Cells
• 出版年：2017
• 出版时间：April 2017
• 年：2017
• 卷：162
• 期：Complete
• 页码：7-12
• 全文大小：944 K
• 卷排序：162

文摘

Optical constants of III-V materials in a GaAsP/SiGe tandem cell are investigated. Spectroscopic ellipsometry with techniques to improve uniqueness are used. Complex indices of refraction of GaAs.84P.16, Ga.59In.41P and Al.65In.35P are found. The results are some of the first published for alloys not lattice-matched to GaAs. This has the potential to improve interpolation of constants for additional alloys.