A consideration for electrical activation of carbon implanted into gallium arsenide

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• 作者：Katsuhiro Yokota ; Naoto Emi ; Masanori Sakaguchi ; Shuuji Sunairi ; Masanori Watanabe ; Toshinori Takagi ; Kiyohito Hirai ; Hiromichi Takano ; Masao Kumagai
• 关键词：Implantation ; Compound semiconductors ; Defects ; Encapsulation
• 刊名：Materials Chemistry and Physics
• 出版年：1998
• 出版时间：July 1998
• 年：1998
• 卷：54
• 期：1-3
• 页码：84-87
• 全文大小：338 K

文摘

C⁺ -implanted GaAs that the surfaces were encapsulated with 2×10²⁰cm⁻³ As-doped a-Si:H films were annealed at temperatures of 850–1000 °C. Carriers were generated only in a shallower region than the projected range of the C⁺ ions. The sheet carrier concentrations increased slightly with the implanted dose. The activation of implanted C atoms in GaAs encapsulated with As-doped a-Si:H films was improved in comparison with Si or GaAs wafer proximity annealed GaAs and SiO₂ encapsulation-annealed GaAs.