Growth of a/c grain boundary with well-defined facet in single-crystalline YBa₂Cu₃O_{7 − δ} film by liquid phase epitaxy

详细信息    查看全文

• 作者：Hui Xiang^a ; ¹ ; Jun Qian^a ; ¹ ; Linshan Guo^a ; Xin Yao^a ; ^b ; ^{xyao@sjtu.edu.cn} ; Jie Xiong^c ; Wei Peng^d ; Qunli Rao^e
• 关键词：High temperature superconductor ; Josephson junction device ; a/c grain boundary structure ; Liquid phase epitaxy (LPE) ; Selective growth
• 刊名：Scripta Materialia
• 出版年：2017
• 出版时间：15 March 2017
• 年：2017
• 卷：130
• 期：Complete
• 页码：54-58
• 全文大小：1048 K
• 卷排序：130

文摘

A novel a/c grain boundary with well-defined facet of the YBa2Cu3O7 − δ (Y123) film featuring a single-crystalline nature was successfully grown by liquid phase epitaxy, differing from conventional ill-defined facet film possessing a polycrystalline characteristic by the prior art deposition techniques. Here the extremely low supersaturation as essential prerequisite was exploited on (110) NdGaO3 (NGO) substrates with partly-etched c-axis Y123 films. Based on the selective growth, preferred a-axis Y123 hetero-epitaxially grew on the bare NGO directly while c-axis Y123 homo-epitaxially proceeded on pre-existing Y123, consequently fabricating a distinct a/c grain boundary, which has great importance for fundamental studies and device applications.