Ferroelectric characteristic of group IV elements added SrBi₂Ta₂O₉ thin films

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• 作者：Susumu Tamura ; Yasuhisa Omura
• 刊名：Microelectronics Reliability
• 出版年：2007
• 出版时间：April-May 2007
• 年：2007
• 卷：47
• 期：4-5
• 页码：830-833
• 全文大小：156 K

文摘

The SrBi₂Ta₂O₉ (SBT) thin film added IV group elements was fabricated on the Pt/Ti/SiO₂/Si substrate by the metal–organic decomposition (MOD) method, the Pt electrode was deposited on the SBT thin film by the DC spattering method. The electric properties of the ferroelectric capacitor were measured. The remanent polarization and the relative dielectric constant of the SBT thin film have decreased, according to the amount of IV group elements addition. The IV group elements added SBT thin film with low relative dielectric constant and low remanent polarization is suitable for the application of the ferroelectric gate FET type memory.