We introduce a molecular-scale charge trap medium for an organic non-volatile memory transistor (ONVMTs).

We use two different types of small molecules which have the same triphenylene cores with either hydroxyl or methoxy end groups.

The ONVMTs with a 5-nm-thick HHTP charge trap layer showed a large hysteresis window, approximately 28.2 V, under a double sweep of the gate bias between 40 V and −40 V.

The HMTP-based structure showed a negligible memory window, which implied that the hydroxyl groups affected hysteresis.

By varying the thickness of the molecular-scale charge trap medium, it was determined that the most efficient charge trapping thickness of HHTP charge trap layer was approximately 5 nm.