A high mobility ambipolar field effect transistor using a 2,6-diphenylbenzo[1,2-b:4,5-b ′]diselenophene/fullerene double layer

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• 作者：Shohei Kinoshita ; Tomo Sakanoue ; Masayuki Yahiro ; Kazuo Takimiya ; Hideaki Ebata ; Masaaki Ikeda ; Hirokazu Kuwabara ; Chihaya Adachi
• 关键词：A. Organic semiconductor ; D. Ambipolar ; D. FET ; D. High mobility
• 刊名：Solid State Communications
• 出版年：2008
• 出版时间：January 2008
• 年：2008
• 卷：145
• 期：3
• 页码：114-117
• 全文大小：547 K

文摘

A high mobility ambipolar field effect transistor (FET) was fabricated using a double-layer structure composed of 2,6-diphenylbenzo[1,2-b:4,5-b′]diselenophene (DPh-BDS) as a p-type layer and fullerene (C₆₀) as an n-type layer. The FET characteristics showed a large dependence on the DPh-BDS thickness, and excellent ambipolar behavior with the maximum electron and hole mobilities of and was obtained with the optimum DPh-BDS thickness of 10–20 nm. The result indicates that the μ_e of C₆₀ was considerably enhanced by keeping it away from the electron traps on the SiO₂ surface and by improving the crystalline texture of the C₆₀, which was achieved by the underlying DPh-BDS buffer layer having a rather high hole mobility on the SiO₂ layer.