Temperature dependence of luminescence spectra in europium doped Ga₂O₃ film

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• 作者：Zhengwei Chen ; Xu Wang ; Fabi Zhang ; Shinji Noda ; Katsuhiko Saito ; Tooru Tanaka ; Mitsuhiro Nishio ; Qixin Guo ; ^{guoq@cc.saga-u.ac.jp" class="auth_mail" title="E-mail the corresponding author}
• 关键词：Europium ; Gallium oxide ; Luminescence ; Epitaxial growth ; Thin films ; PLD
• 刊名：Journal of Luminescence
• 出版年：2016
• 出版时间：September 2016
• 年：2016
• 卷：177
• 期：Complete
• 页码：48-53
• 全文大小：1374 K

文摘

Europium doped Ga₂O₃ films were deposited on sapphire substrates by using pulsed laser deposition. The influences of substrate temperature on structural and optical properties have been systematically investigated by means of X-ray diffraction and photoluminescence. High quality single (−201) oriented Ga₂O₃ film can be obtained at substrate temperature of 400 °C. The emission intensity of Eu³⁺ decreased solely with elevated temperature by using 325 nm light, while it had a maximum value at a certain temperature under 488 nm light. Both of the experimental data were well fitted by the luminescence dynamic equation models, suggesting that the variation of the emission intensity may be attributed to the thermal activated distribution of electrons among ⁷F_j and thermal quenching effect.