Nanostructure and adhesion of electroless-plated Cu film on the self-catalyzed Cu using metal-plasma ion implanter

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• 作者：Uei-Shin Chen ; Wei-Jen Hsieh ; Han C. Shih ; Yee-Shyi Chang ; Ko-Wei Weng and Da-Yung Wang
• 关键词：MPII ; Self-catalyzed ; Electroless plating ; Trench/via
• 刊名：Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
• 出版年：2005
• 出版时间：2005
• 年：2005
• 卷：237
• 期：1-2
• 页码：470-476
• 全文大小：485 K

文摘

Metal-plasma ion implanter has been used in this research to insert Cu ions as self-catalyst into the sub-surface of the TaN/FSG/Si assembly for electroless-plated Cu film. Cu ions were first implanted using two dosages of 5.0 × 10¹⁶ and 10 × 10¹⁶ cm⁻² at accelerating voltages of 30, 40, and 50 kV.

The specimens were characterized by field emission scanning electron microscopy, atomic force microscopy, and mechanical pull-up tests. A noticed relationship between the implanted voltage and the nanostructure of the implanted Cu was established. The effects of the implanted nanostructure related to the adhesion strength of the electroless-plated Cu film were discussed. The adhesion strength of the final electroless-plated Cu film followed with the implanted dosage of 10 × 10¹⁶ cm⁻² is apparently higher than that with the dosage of 5.0 × 10¹⁶ cm⁻² at the same accelerating voltage. The adhesion strength of the Cu films tends to decrease with the increasing accelerating voltages applied for the implantation. An excellent gap-filling capability in a 0.2 μm width (aspect ratio 7:1) via was obtained.