Lattice evolution and point defect chemistry in Ta-doped ceria

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• 作者：T. Charoonsuk^a ; ^b ; N. Vittayakorn^a ; ^b ; ^c ; T. Kolodiazhnyi^d ; ^{kolodiazhnyi.taras@nims.go.jp}
• 关键词：Semiconductors ; Enthalpy ; Crystal and ligand fields ; Magnetization ; Vacancy formation
• 刊名：Journal of Alloys and Compounds
• 出版年：2017
• 出版时间：25 February 2017
• 年：2017
• 卷：695
• 期：Complete
• 页码：1317-1323
• 全文大小：1220 K
• 卷排序：695

文摘

A highly accurate magnetic method quantifies Ce3+ concentration in ceria. Point defect equilibrium in donor-doped ceria is solved quantitatively. Donors are compensated by both oxygen interstitials and Ce3+. The enthalpy of formation of anion Frenkel defect is reported. Lattice expansion in response to the interstitial oxygen is quantified.