Interfacial engineering of two-dimensional nano-structured materials by atomic layer deposition
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- 作者：Serge Zhuiykova ; serge.zhuiykov@ugent.be" class="auth_mail" title="E-mail the corresponding author ; Toshikazu Kawaguchib ; c ; Zhenyin Haia ; Mohammad Karbalaei Akbaria ; Philippe M. Heynderickxa
- 关键词：Atomic layer deposition (ALD) ; Two-dimensional nano-materials ; Nano-architecture
- 刊名：Applied Surface Science
- 出版年：2017
- 出版时间：15 January 2017
- 年：2017
- 卷：392
- 期：Complete
- 页码：231-243
- 全文大小：3574 K
文摘
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Advantages of atomic layer deposition technology (ALD) for two-dimensional nano-crystals.
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Conformation of ALD technique and chemistry of precursors.
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ALD of semiconductor oxide thin films.
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Ultra-thin (∼1.47 nm thick) ALD-developed tungsten oxide nano-crystals on large area.