Pattern transfer of hexagonal packed structure via ultrathin metal nanomesh masks for formation of Si nanopore arrays
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文摘
A method for ultrathin Au nanomesh assisted in transferring AAO pattern is proposed. Au nanomesh keeps a close contact to Si substrate through the sacrificial PMMA layer. The problem that high aspect ratio AAO is not suitable for as etching mask is solved. This technology improves the pattern fidelity and reduces defects.

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