In2O3:W (IWO) and In2O3:Sn (ITO) films were obtained by RF magnetron sputtering. Atomic oxygen (AO) has oxidation and erosion effects on ITO and IWO films. AO resistance of IWO and ITO films were compared and analyzed. Incremental WO3 in IWO films can serve as protective layer under AO oxidation. IWO films can be better candidates for anti-AO applications than ITO films.