DC-sputtered bi-layer of Mo thin films were transformed into MoOx nanobelts by simple thermal annealing technique. MoOx nanobelts grown at different annealing time possess (021) preferred orientation. AFM study reveals nanobelts produced by annealing for 150 minutes have mean height of 0.5 µm. Raman spectroscopy study reveals that MoO3 * (H2O)0.3 acts as an intermediate compound during growth of MoOx nanobelts. MoOx nanobelts grown at annealing time of 30 minutes to 90 minutes exhibit metallic like electrical properties.