文摘
The interfacial TiO2/SiO2/TiO2 trilayer has been used for the first time in hybrid-integrated multijunction architecture. The TiO2/SiO2/TiO2 trilayer has achieved ~15% averaged reflection comparable to As2Se3 in the NIR range of 1200~1800 nm. A similar hort-circuit current density of 7 mA/cm2 has been realized with both As2Se3 and trilayer, even with some air gaps in between. About 5% averaged reflection in the NIR range of 1200~1800nm has been simulated with the ideal top ARC, bringing at least 10% boost of EQE.