Influence of local thermal dissipation on electromigration in an Al thin-film line
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- 作者：Yuan Li ; liyuan@mail.tohoku-gakuin.ac.jp" class="auth_mail" title="E-mail the corresponding author ; Hsin-Tzu Lee ; Masumi Saka
- 关键词：Al thin-film line ; Current stressing ; Atomic flux divergence ; Electromigration ; Local thermal dissipation
- 刊名：Microelectronics Reliability
- 出版年：2016
- 出版时间：October 2016
- 年：2016
- 卷：65
- 期：Complete
- 页码：178-183
- 全文大小：1476 K
文摘
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Current stressing experiments were performed on Al thin-film lines with a special design.
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The unique distribution of hillocks/voids was identified, which indicates the influence of local thermal dissipation on EM.
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The mechanism was explored by analyzing the atomic flux divergence in the line based on FEA.
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The influence of the location of local thermal dissipation was also clarified.