Performance improvement of GaN-based near-UV LEDs with InGaN/AlGaN superlattices strain relief layer and AlGaN barrier
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- 作者：Chuanyu Jiaa ; b ; Tongjun Yua ; tongjun@pku.edu.cn" class="auth_mail" title="E-mail the corresponding author ; Xiaohui Fenga ; Kun Wanga ; Guoyi Zhanga ; b
- 关键词：Light-emitting diodes (LEDs) ; GaN-based ; AlGaN barrier ; Strain relief layer (SRL)
- 刊名：Superlattices and Microstructures
- 出版年：2016
- 出版时间：September 2016
- 年：2016
- 卷：97
- 期：Complete
- 页码：417-423
- 全文大小：1282 K
文摘
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GaN-based near-UV LEDs with InGaN/AlGaN SLs SRL and AlGaN barrier were fabricated.
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Optoelectronic properties of near-UV LEDs were measured and calculated.
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The near-UV LEDs with SRL and AlGaN barrier have higher light output power.
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The near-UV LEDs with SRL and AlGaN barrier have lower forward voltage.