Thickness-dependent magnetotransport properties and terahertz response of topological insulator Bi2Te3 thin films
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- 作者：Phuoc Huu Lea ; Po-Tsun Liub ; Chih Wei Luob ; c ; cwluo@mail.nctu.edu.tw" class="auth_mail" title="E-mail the corresponding author ; Jiunn-Yuan Lind ; Kaung Hsiung Wub ; khwu@cc.nctu.edu.tw" class="auth_mail" title="E-mail the corresponding author
- 关键词：Topological insulator ; Bismuth telluride ; Weak antilocalization ; Terahertz spectroscopy ; Pulsed laser deposition
- 刊名：Journal of Alloys and Compounds
- 出版年：2017
- 出版时间：25 January 2017
- 年：2017
- 卷：692
- 期：Complete
- 页码：972-979
- 全文大小：2940 K
文摘
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A study on thickness-dependent magnetotransport properties and terahertz response of Bi2Te3 films.
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A signature of topological surface states (TSS) on Bi2Te3 is revealed by 2D WAL magnetoresistance.
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The transmittance in 0.25–2.25 THz increases significantly with reducing film thicknesses.
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Complex THz conductance is well described by the Drude-Lorentz model.
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The TSS penetration depth is found to be approximately 3 QL (quintuple layer).