A new LIGBT structure to suppress substrate currents in a junction isolated technology

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• 作者：Bakeroot ; B. ; Doutreloigne ; J. ; Moens ; P.
• 关键词：LIGBT ; Isolation ; Latch-up ; Substrate current ; Junction isolated technology
• 刊名：Solid State Electronics
• 出版年：2005
• 出版时间：March, 2005
• 年：2005
• 卷：49
• 期：3
• 页码：363-367
• 全文大小：324 K

文摘

In this paper, a new lateral insulated gate bipolar transistor (LIGBT) structure is proposed to suppress substrate currents in a junction isolated technology by using two buried layers on top of each other. This structure not only allows to reduce the substrate to anode current ratio to less than 10⁻⁷, it also yields a device with a large safe operating area and a fast turn-off. Because of the two buried layers, the proposed LIGBT can be used as a floating (above substrate potential) device. Furthermore, the LIGBT is introduced in an existing 80 V smart power technology without the costly need of defining new layers. It has also been shown that the proposed LIGBT can compete with vertical DMOS (VDMOS) devices when used as a large driver. Together with an equivalent circuit, two dimensional simulation has been used to explain the observed device’s substrate current behaviour.